European research conference on extended defects in semiconductorsPhysica status solidi. A. Applied research. 1993, Vol 138, Num 2, issn 0031-8965Conference Proceedings

Ultrasonic treatment of GaP and GaAsKLIMM, D; TIPPELT, B; PAUFLER, P et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 517-521, issn 0031-8965Conference Paper

Density functional calculations for stacking faults and grain boundaries in siliconTEICHLER, H; SANGUINETTI, S.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 361-367, issn 0031-8965Conference Paper

Density functional calculations of the structure and properties of impurities and dislocations in semiconductorsJONES, R; UMERSKI, A; SITCH, P et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 369-381, issn 0031-8965Conference Paper

Internal friction in undeformed and deformed GaAs by the formation and recovery of metastable EL2ERTEL, J; BRION, H. G; HAASEN, P et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 497-504, issn 0031-8965Conference Paper

Local investigation of grain boundaries by grain-boundary EBICPALM, J; ALEXANDER, H.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 639-648, issn 0031-8965Conference Paper

Misfit dislocations in modulation-doped In_0.2Ga_0.8As/GaAs strained multilayer structuresWANG, J; STEEDS, J. W; WESTWOOD, D. I et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 431-435, issn 0031-8965Conference Paper

Dislocation dynamics and mechanical behaviour of elemental and compound semiconductorsSUMINO, K; YONENAGA, I.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 573-581, issn 0031-8965Conference Paper

Dynamical recovery, dislocation mobility, and diffusion in undoped semiconductorsSIETHOFF, H.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 591-599, issn 0031-8965Conference Paper

Interactions of oxygen, carbon, and extended defects in siliconPIZZINI, S; BINETTI, S; ACCIARRI, M et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 451-464, issn 0031-8965Conference Paper

1D conduction and photoconduction measurements at dislocations in GeHESS, J; LABUSCH, R.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 617-624, issn 0031-8965Conference Paper

Cobalt- and nickel-disilicide formation at twin boundaries in siliconCHUNG, J; MÖLLER, H. J.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 473-482, issn 0031-8965Conference Paper

Dislocation generation during the precipitation of oxygen in siliconREICHE, M.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 409-416, issn 0031-8965Conference Paper

Dislocation-gold interaction in silicon : the role of dislocations as sinks for self-interstitialsPICHAUD, B; MARIANI, G; TAYLOR, W. J et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 465-471, issn 0031-8965Conference Paper

EDSR investigation of n-type silicon deformed under high stressWATTENBACH, M; ALEXANDER, H.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 607-615, issn 0031-8965Conference Paper

In situ transmission electron microscopy of semiconductorsHEYDENREICH, J; BAITHER, D; HOEHL, D et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 505-515, issn 0031-8965Conference Paper

Influence of microwave heating on dislocation photoluminescence in plastically deformed germaniumKVEDER, V. V; STEINMAN, E. A.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 625-630, issn 0031-8965Conference Paper

Dislocation motion in strained thin films : are kinks colliding with each other ?MAEDA, K; YAMASHITA, Y.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 523-532, issn 0031-8965Conference Paper

Formation of dislocations and other types of extended defects by ion implantationAULEYTNER, J; MORAWIEC, J.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 403-408, issn 0031-8965Conference Paper

Spontaneous nucleation of misfit dislocations in strained epitaxial layersPEROVIC, D. D; HOUGHTON, D. C.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 425-430, issn 0031-8965Conference Paper

Dislocation dynamics in Ge single crystals under conditions of periodic two-level intermittent loadingIUNIN, YU. L; NIKITENKO, V. I; ORLOV, V. I et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 601-606, issn 0031-8965Conference Paper

Nucleation of dislocation and twins within heteroepitaxial In_1-xGa_xAs layers grown on (001) InP under tensile stress conditionsWAGNER, G; PAUFLER, P.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 389-402, issn 0031-8965Conference Paper

Studies on carrier recombination at dislocations in compound semiconductors by combined SEM-CL/EBIC measurementsSCHREIBER, J; HILDEBRANDT, S; LEIPNER, H. S et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 705-713, issn 0031-8965Conference Paper

Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenideSIEBER, B; FARVACQUE, J. L; MIRI, A et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 673-680, issn 0031-8965Conference Paper

Dynamics of dislocations in II-VI compounds under electronic excitation : a TEM in situ studyFARESS, A; LEVADE, C; VANDERSCHAEVE, G et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 583-589, issn 0031-8965Conference Paper